NSV40300MDR2G

NSV40300MDR2G

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays

Description

LOW VCE(SAT) TRANSISTOR, DUAL PN

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    2 PNP (Dual)
  • Current - Collector (Ic) (Max)
    3A
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Vce Saturation (Max) @ Ib, Ic
    170mV @ 200mA, 2A
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    180 @ 1A, 2V
  • Power - Max
    653mW
  • Frequency - Transition
    100MHz
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SOIC

NSV40300MDR2G Request a Quote

In Stock 33180
Quantity:
Unit Price (Reference Price):
0.31000
Target price:
Total:0.31000

Datasheet