Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Obsolete
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  25 V
• Current - Continuous Drain (Id) @ 25°C
  6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  -
• Rds On (Max) @ Id, Vgs
  45mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id
  2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  3.76 nC @ 4.5 V
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  225 pF @ 20 V
• FET Feature
  -
• Power Dissipation (Max)
  37.5W (Ta)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  D2PAK-3
• Package / Case
  TO-263-3, D²Pak (2 Leads + Tab), TO-263AB