NTHD2102PT1

NTHD2102PT1

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

P-CHANNEL POWER MOSFET

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    2 P-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    8V
  • Current - Continuous Drain (Id) @ 25°C
    3.4A
  • Rds On (Max) @ Id, Vgs
    58mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    715pF @ 6.4V
  • Power - Max
    1.1W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SMD, Flat Lead
  • Supplier Device Package
    ChipFET™

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In Stock 72359
Quantity:
Unit Price (Reference Price):
0.14000
Target price:
Total:0.14000

Datasheet