NTHS2101PT1

NTHS2101PT1

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET P-CH 8V 5.4A CHIPFET

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    8 V
  • Current - Continuous Drain (Id) @ 25°C
    5.4A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs
    25mOhm @ 5.4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    30 nC @ 4.5 V
  • Vgs (Max)
    ±8V
  • Input Capacitance (Ciss) (Max) @ Vds
    2.4 pF @ 6.4 V
  • FET Feature
    -
  • Power Dissipation (Max)
    1.3W (Ta)
  • Operating Temperature
    -
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    ChipFET™
  • Package / Case
    8-SMD, Flat Lead

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In Stock 67607
Quantity:
Unit Price (Reference Price):
0.15000
Target price:
Total:0.15000

Datasheet