NTLGD3502NT1G

NTLGD3502NT1G

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

N-CHANNEL POWER MOSFET

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    4.3A, 3.6A
  • Rds On (Max) @ Id, Vgs
    60mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    480pF @ 10V
  • Power - Max
    1.74W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-VDFN Exposed Pad
  • Supplier Device Package
    6-DFN (3x3)

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In Stock 24102
Quantity:
Unit Price (Reference Price):
0.43000
Target price:
Total:0.43000

Datasheet