NTMD6N04R2G

NTMD6N04R2G

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

N-CHANNEL POWER MOSFET

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    40V
  • Current - Continuous Drain (Id) @ 25°C
    4.6A
  • Rds On (Max) @ Id, Vgs
    34mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    900pF @ 32V
  • Power - Max
    1.29W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SOIC

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In Stock 36538
Quantity:
Unit Price (Reference Price):
0.28000
Target price:
Total:0.28000

Datasheet