PBSS4160DSZ

PBSS4160DSZ

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays

Description

PBSS4160DS - 60 V, 1 A NPN/NPN L

Specifications

  • Series
    *
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN, PNP
  • Current - Collector (Ic) (Max)
    1A
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 100mA, 1A
  • Current - Collector Cutoff (Max)
    100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    250 @ 1mA, 5V
  • Power - Max
    700mW
  • Frequency - Transition
    150MHz
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Supplier Device Package
    6-TSOP

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In Stock 143662
Quantity:
Unit Price (Reference Price):
0.07000
Target price:
Total:0.07000

Datasheet