PBSS4160PANSX

PBSS4160PANSX

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays

Description

PBSS4160PANS - 60 V, 1 A NPN/NPN

Specifications

  • Series
    Automotive, AEC-Q101
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    2 NPN (Dual)
  • Current - Collector (Ic) (Max)
    1A
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    120mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    150 @ 500mA, 2V
  • Power - Max
    370mW
  • Frequency - Transition
    175MHz
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-UDFN Exposed Pad
  • Supplier Device Package
    DFN2020D-6

PBSS4160PANSX Request a Quote

In Stock 84216
Quantity:
Unit Price (Reference Price):
0.12000
Target price:
Total:0.12000

Datasheet