PBSS4260PAN,115

PBSS4260PAN,115

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays

Description

SMALL SIGNAL BIPOLAR TRANSISTOR,

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    2 NPN (Dual)
  • Current - Collector (Ic) (Max)
    2A
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    90mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1A, 2V
  • Power - Max
    510mW
  • Frequency - Transition
    140MHz
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-UDFN Exposed Pad
  • Supplier Device Package
    6-HUSON-EP (2x2)

PBSS4260PAN,115 Request a Quote

In Stock 84245
Quantity:
Unit Price (Reference Price):
0.12000
Target price:
Total:0.12000

Datasheet