PDTD113EUF

PDTD113EUF

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

NOW NEXPERIA PDTD113EUF - SMALL

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN - Pre-Biased
  • Current - Collector (Ic) (Max)
    500 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    1 kOhms
  • Resistor - Emitter Base (R2)
    1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    225 MHz
  • Power - Max
    300 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Supplier Device Package
    SOT-323

PDTD113EUF Request a Quote

In Stock 334275
Quantity:
Unit Price (Reference Price):
0.03000
Target price:
Total:0.03000

Datasheet