Specifications

• Series
  TrenchMOS™
• Package
  Bulk
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  55 V
• Current - Continuous Drain (Id) @ 25°C
  4.9A (Ta), 10.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  -
• Rds On (Max) @ Id, Vgs
  40mOhm @ 5A, 5V
• Vgs(th) (Max) @ Id
  2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs
  17 nC @ 5 V
• Vgs (Max)
  ±13V
• Input Capacitance (Ciss) (Max) @ Vds
  1400 pF @ 25 V
• FET Feature
  -
• Power Dissipation (Max)
  1.8W (Ta), 8.3W (Tc)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  SC-73
• Package / Case
  TO-261-4, TO-261AA