Specifications

• Series
  TrenchMOS™
• Package
  Bulk
• Part Status
  Active
• FET Type
  2 N-Channel (Dual)
• FET Feature
  Standard
• Drain to Source Voltage (Vdss)
  20V
• Current - Continuous Drain (Id) @ 25°C
  4.6A (Ta)
• Rds On (Max) @ Id, Vgs
  37mOhm @ 4.6A, 4.5V
• Vgs(th) (Max) @ Id
  1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  4.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds
  265pF @ 10V
• Power - Max
  510mW (Ta), 8.33W (Tc)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Package / Case
  6-UDFN Exposed Pad
• Supplier Device Package
  6-HUSON-EP (2x2)