PMN23UN,135

PMN23UN,135

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 20V 6.3A 6TSOP

Specifications

  • Series
    TrenchMOS™
  • Package
    Bulk
  • Part Status
    Not For New Designs
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    20 V
  • Current - Continuous Drain (Id) @ 25°C
    6.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs
    28mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id
    700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    10.6 nC @ 4.5 V
  • Vgs (Max)
    ±8V
  • Input Capacitance (Ciss) (Max) @ Vds
    740 pF @ 10 V
  • FET Feature
    -
  • Power Dissipation (Max)
    1.75W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    6-TSOP
  • Package / Case
    SC-74, SOT-457

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In Stock 84164
Quantity:
Unit Price (Reference Price):
0.12000
Target price:
Total:0.12000