RF1S22N10SM

RF1S22N10SM

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

N-CHANNEL POWER MOSFET

Specifications

  • Series
    *
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    -
  • Technology
    -
  • Drain to Source Voltage (Vdss)
    -
  • Current - Continuous Drain (Id) @ 25°C
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Rds On (Max) @ Id, Vgs
    -
  • Vgs(th) (Max) @ Id
    -
  • Gate Charge (Qg) (Max) @ Vgs
    -
  • Vgs (Max)
    -
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • FET Feature
    -
  • Power Dissipation (Max)
    -
  • Operating Temperature
    -
  • Mounting Type
    -
  • Supplier Device Package
    -
  • Package / Case
    -

RF1S22N10SM Request a Quote

In Stock 28260
Quantity:
Unit Price (Reference Price):
0.73000
Target price:
Total:0.73000