RJK03E3DNS-00#J5

RJK03E3DNS-00#J5

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 30V 14A 8HWSON

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    30 V
  • Current - Continuous Drain (Id) @ 25°C
    14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Rds On (Max) @ Id, Vgs
    11.6mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id
    -
  • Gate Charge (Qg) (Max) @ Vgs
    5.7 nC @ 4.5 V
  • Vgs (Max)
    -
  • Input Capacitance (Ciss) (Max) @ Vds
    1.05 pF @ 10 V
  • FET Feature
    -
  • Power Dissipation (Max)
    10W (Tc)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    8-HWSON (3.3x3.3)
  • Package / Case
    8-PowerWDFN

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In Stock 25384
Quantity:
Unit Price (Reference Price):
0.41000
Target price:
Total:0.41000