Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Obsolete
• FET Type
  P-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  30 V
• Current - Continuous Drain (Id) @ 25°C
  2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  4V, 10V
• Rds On (Max) @ Id, Vgs
  150mOhm @ 1A, 10V
• Vgs(th) (Max) @ Id
  -
• Gate Charge (Qg) (Max) @ Vgs
  3.9 nC @ 10 V
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  172 pF @ 10 V
• FET Feature
  -
• Power Dissipation (Max)
  800mW (Ta)
• Operating Temperature
  150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  6-SCH
• Package / Case
  SOT-563, SOT-666