SPP21N10

SPP21N10

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 100V 21A TO220-3

Specifications

  • Series
    SIPMOS®
  • Package
    Tube
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    100 V
  • Current - Continuous Drain (Id) @ 25°C
    21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    80mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 44µA
  • Gate Charge (Qg) (Max) @ Vgs
    38.4 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    865 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    90W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    PG-TO220-3-1
  • Package / Case
    TO-220-3

SPP21N10 Request a Quote

In Stock 33735
Quantity:
Unit Price (Reference Price):
0.61000
Target price:
Total:0.61000

Datasheet