Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Active
• FET Type
  P-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  15 V
• Current - Continuous Drain (Id) @ 25°C
  1.27A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  2.7V, 10V
• Rds On (Max) @ Id, Vgs
  180mOhm @ 1.5A, 10V
• Vgs(th) (Max) @ Id
  1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  5.45 nC @ 10 V
• Vgs (Max)
  +2V, -15V
• Input Capacitance (Ciss) (Max) @ Vds
  -
• FET Feature
  -
• Power Dissipation (Max)
  504mW (Ta)
• Operating Temperature
  -40°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  8-TSSOP
• Package / Case
  8-TSSOP (0.173", 4.40mm Width)