DTA115EEBTL

DTA115EEBTL

Manufacturer

ROHM Semiconductor

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

TRANS PREBIAS PNP 150MW EMT3

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)
  • Part Status
    Not For New Designs
  • Transistor Type
    PNP - Pre-Biased
  • Current - Collector (Ic) (Max)
    20 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    100 kOhms
  • Resistor - Emitter Base (R2)
    100 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    82 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    250 MHz
  • Power - Max
    150 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-75, SOT-416
  • Supplier Device Package
    EMT3

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In Stock 227447
Quantity:
Unit Price (Reference Price):
0.04413
Target price:
Total:0.04413

Datasheet