DTB123YUT106

DTB123YUT106

Manufacturer

ROHM Semiconductor

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

TRANS PREBIAS PNP 200MW UMT3

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    PNP - Pre-Biased
  • Current - Collector (Ic) (Max)
    500 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    2.2 kOhms
  • Resistor - Emitter Base (R2)
    10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    56 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    200 MHz
  • Power - Max
    200 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Supplier Device Package
    UMT3

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In Stock 21352
Quantity:
Unit Price (Reference Price):
0.49000
Target price:
Total:0.49000

Datasheet