DTD122JKT146

DTD122JKT146

Manufacturer

ROHM Semiconductor

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

TRANS PREBIAS NPN 200MW SMT3

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)
  • Part Status
    Not For New Designs
  • Transistor Type
    NPN - Pre-Biased
  • Current - Collector (Ic) (Max)
    500 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    220 Ohms
  • Resistor - Emitter Base (R2)
    4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    47 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    200 MHz
  • Power - Max
    200 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SMT3

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In Stock 70688
Quantity:
Unit Price (Reference Price):
0.14342
Target price:
Total:0.14342

Datasheet