DTD523YMT2L

DTD523YMT2L

Manufacturer

ROHM Semiconductor

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

TRANS PREBIAS NPN 150MW VMT3

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)
  • Part Status
    Active
  • Transistor Type
    NPN - Pre-Biased
  • Current - Collector (Ic) (Max)
    500 mA
  • Voltage - Collector Emitter Breakdown (Max)
    12 V
  • Resistor - Base (R1)
    2.2 kOhms
  • Resistor - Emitter Base (R2)
    10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    140 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    260 MHz
  • Power - Max
    150 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-723
  • Supplier Device Package
    VMT3

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In Stock 94835
Quantity:
Unit Price (Reference Price):
0.10650
Target price:
Total:0.10650

Datasheet