EMH6T2R

EMH6T2R

Manufacturer

ROHM Semiconductor

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

TRANS 2NPN PREBIAS 0.15W EMT6

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Not For New Designs
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max)
    100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Resistor - Base (R1)
    47kOhms
  • Resistor - Emitter Base (R2)
    47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    250MHz
  • Power - Max
    150mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Supplier Device Package
    EMT6

EMH6T2R Request a Quote

In Stock 21235
Quantity:
Unit Price (Reference Price):
0.49000
Target price:
Total:0.49000

Datasheet