QS8M12TCR

QS8M12TCR

Manufacturer

ROHM Semiconductor

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET N/P-CH 30V 4A TSMT8

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Not For New Designs
  • FET Type
    N and P-Channel
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    30V
  • Current - Continuous Drain (Id) @ 25°C
    4A
  • Rds On (Max) @ Id, Vgs
    42mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    3.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds
    250pF @ 10V
  • Power - Max
    1.5W
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SMD, Flat Lead
  • Supplier Device Package
    TSMT8

QS8M12TCR Request a Quote

In Stock 30029
Quantity:
Unit Price (Reference Price):
0.34293
Target price:
Total:0.34293

Datasheet