R6006JND3TL1

R6006JND3TL1

Manufacturer

ROHM Semiconductor

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 600V 6A TO252

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Rds On (Max) @ Id, Vgs
    936mOhm @ 3A, 15V
  • Vgs(th) (Max) @ Id
    7V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs
    15.5 nC @ 15 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    410 pF @ 100 V
  • FET Feature
    -
  • Power Dissipation (Max)
    86W (Tc)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    TO-252
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock 14480
Quantity:
Unit Price (Reference Price):
2.21000
Target price:
Total:2.21000