R6035ENZ1C9

R6035ENZ1C9

Manufacturer

ROHM Semiconductor

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 600V 35A TO247

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    102mOhm @ 18.1A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    110 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    2720 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    120W (Tc)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-247
  • Package / Case
    TO-247-3

R6035ENZ1C9 Request a Quote

In Stock 10219
Quantity:
Unit Price (Reference Price):
5.33000
Target price:
Total:5.33000

Datasheet