Specifications

• Series
  -
• Package
  Tube
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  600 V
• Current - Continuous Drain (Id) @ 25°C
  50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  15V
• Rds On (Max) @ Id, Vgs
  83mOhm @ 25A, 15V
• Vgs(th) (Max) @ Id
  7V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs
  120 nC @ 15 V
• Vgs (Max)
  ±30V
• Input Capacitance (Ciss) (Max) @ Vds
  4500 pF @ 100 V
• FET Feature
  -
• Power Dissipation (Max)
  120W (Tc)
• Operating Temperature
  150°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-3PF
• Package / Case
  TO-3P-3 Full Pack