RD3S100CNTL1

RD3S100CNTL1

Manufacturer

ROHM Semiconductor

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 190V 10A TO252

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    190 V
  • Current - Continuous Drain (Id) @ 25°C
    10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4V, 10V
  • Rds On (Max) @ Id, Vgs
    182mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    52 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    2000 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    85W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    TO-252
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63

RD3S100CNTL1 Request a Quote

In Stock 15593
Quantity:
Unit Price (Reference Price):
2.04000
Target price:
Total:2.04000

Datasheet