RDD050N20TL

RDD050N20TL

Manufacturer

ROHM Semiconductor

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 200V 5A CPT3

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Not For New Designs
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    200 V
  • Current - Continuous Drain (Id) @ 25°C
    5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    720mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    9.3 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    292 pF @ 10 V
  • FET Feature
    -
  • Power Dissipation (Max)
    20W (Tc)
  • Operating Temperature
    -
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    CPT3
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63

RDD050N20TL Request a Quote

In Stock 12595
Quantity:
Unit Price (Reference Price):
1.70000
Target price:
Total:1.70000

Datasheet