RGT30NS65DGTL

RGT30NS65DGTL

Manufacturer

ROHM Semiconductor

Product Category

Transistors - IGBTs - Single

Description

IGBT 650V 30A 133W TO-263S

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    30 A
  • Current - Collector Pulsed (Icm)
    45 A
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 15A
  • Power - Max
    133 W
  • Switching Energy
    -
  • Input Type
    Standard
  • Gate Charge
    32 nC
  • Td (on/off) @ 25°C
    18ns/64ns
  • Test Condition
    400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
    55 ns
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    LPDS (TO-263S)

RGT30NS65DGTL Request a Quote

In Stock 11230
Quantity:
Unit Price (Reference Price):
1.95000
Target price:
Total:1.95000

Datasheet