Specifications

• Series
  -
• Package
  Tape & Reel (TR)
• Part Status
  Not For New Designs
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  60 V
• Current - Continuous Drain (Id) @ 25°C
  22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  4V, 10V
• Rds On (Max) @ Id, Vgs
  26mOhm @ 22A, 10V
• Vgs(th) (Max) @ Id
  3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs
  30 nC @ 10 V
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  1500 pF @ 10 V
• FET Feature
  -
• Power Dissipation (Max)
  850mW (Ta), 20W (Tc)
• Operating Temperature
  150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  CPT3
• Package / Case
  TO-252-3, DPak (2 Leads + Tab), SC-63