RW1C026ZPT2CR

RW1C026ZPT2CR

Manufacturer

ROHM Semiconductor

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET P-CH 20V 2.5A 6WEMT

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Not For New Designs
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    20 V
  • Current - Continuous Drain (Id) @ 25°C
    2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs
    70mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    10 nC @ 4.5 V
  • Vgs (Max)
    ±10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1250 pF @ 10 V
  • FET Feature
    -
  • Power Dissipation (Max)
    700mW (Ta)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    6-WEMT
  • Package / Case
    SOT-563, SOT-666

RW1C026ZPT2CR Request a Quote

In Stock 23664
Quantity:
Unit Price (Reference Price):
0.44000
Target price:
Total:0.44000

Datasheet