STB33N65M2

STB33N65M2

Manufacturer

STMicroelectronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 650V 24A D2PAK

Specifications

  • Series
    MDmesh™ M2
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    140mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    41.5 nC @ 10 V
  • Vgs (Max)
    ±25V
  • Input Capacitance (Ciss) (Max) @ Vds
    1790 pF @ 100 V
  • FET Feature
    -
  • Power Dissipation (Max)
    190W (Tc)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    D2PAK
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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In Stock 10168
Quantity:
Unit Price (Reference Price):
3.21000
Target price:
Total:3.21000

Datasheet