STGB15M65DF2

STGB15M65DF2

Manufacturer

STMicroelectronics

Product Category

Transistors - IGBTs - Single

Description

TRENCH GATE FIELD-STOP IGBT M SE

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    30 A
  • Current - Collector Pulsed (Icm)
    60 A
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 15A
  • Power - Max
    136 W
  • Switching Energy
    90µJ (on), 450µJ (off)
  • Input Type
    Standard
  • Gate Charge
    45 nC
  • Td (on/off) @ 25°C
    24ns/93ns
  • Test Condition
    400V, 15A, 12Ohm, 15V
  • Reverse Recovery Time (trr)
    142 ns
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    D2PAK

STGB15M65DF2 Request a Quote

In Stock 11095
Quantity:
Unit Price (Reference Price):
1.95000
Target price:
Total:1.95000

Datasheet