CSD25310Q2T

CSD25310Q2T

Manufacturer

Texas Instruments

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET P-CH 20V 20A 6WSON

Specifications

  • Series
    NexFET™
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    20 V
  • Current - Continuous Drain (Id) @ 25°C
    20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs
    23.9mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id
    1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    4.7 nC @ 4.5 V
  • Vgs (Max)
    ±8V
  • Input Capacitance (Ciss) (Max) @ Vds
    655 pF @ 10 V
  • FET Feature
    -
  • Power Dissipation (Max)
    2.9W (Ta)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    6-WSON (2x2)
  • Package / Case
    6-WDFN Exposed Pad

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In Stock 28650
Quantity:
Unit Price (Reference Price):
0.72000
Target price:
Total:0.72000