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HN1A01FE-GR,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Product Category
Transistors - Bipolar (BJT) - Arrays
Description
TRANS 2PNP 50V 0.15A ES6
RFQ Email: [email protected] or Inquires online
Specifications
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Series-
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PackageTape & Reel (TR)
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Part StatusActive
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Transistor Type2 PNP (Dual)
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Current - Collector (Ic) (Max)150mA
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Voltage - Collector Emitter Breakdown (Max)50V
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Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
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Current - Collector Cutoff (Max)100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
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Power - Max100mW
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Frequency - Transition80MHz
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Operating Temperature150°C (TJ)
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Mounting TypeSurface Mount
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Package / CaseSOT-563, SOT-666
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Supplier Device PackageES6
