HN3C10FUTE85LF

HN3C10FUTE85LF

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANS 2 NPN 12V 7GHZ US6

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Frequency - Transition
    7GHz
  • Noise Figure (dB Typ @ f)
    1.1dB @ 1GHz
  • Gain
    11.5dB
  • Power - Max
    200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 20mA, 10V
  • Current - Collector (Ic) (Max)
    80mA
  • Operating Temperature
    -
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
    US6

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In Stock 37872
Quantity:
Unit Price (Reference Price):
0.54000
Target price:
Total:0.54000