HN4B04J(TE85L,F)

HN4B04J(TE85L,F)

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - Bipolar (BJT) - Arrays

Description

TRANS NPN/PNP 30V 0.5A SMV

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Obsolete
  • Transistor Type
    NPN, PNP
  • Current - Collector (Ic) (Max)
    500mA
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max)
    100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 100mA, 1V
  • Power - Max
    300mW
  • Frequency - Transition
    200MHz
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74A, SOT-753
  • Supplier Device Package
    SMV

HN4B04J(TE85L,F) Request a Quote

In Stock 31285
Quantity:
Unit Price (Reference Price):
0.33000
Target price:
Total:0.33000

Datasheet