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RN1708JE(TE85L,F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Product Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
NPN X 2 BRT, Q1BSR=22KΩ, Q1BER=4
RFQ Email: [email protected] or Inquires online
Specifications
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Series-
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PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
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Part StatusActive
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Transistor Type2 NPN - Pre-Biased (Dual) (Emitter Coupled)
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Current - Collector (Ic) (Max)100mA
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Voltage - Collector Emitter Breakdown (Max)50V
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Resistor - Base (R1)22kOhms
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Resistor - Emitter Base (R2)47kOhms
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DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
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Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
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Current - Collector Cutoff (Max)500nA
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Frequency - Transition250MHz
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Power - Max100mW
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Mounting TypeSurface Mount
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Package / CaseSOT-553
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Supplier Device PackageESV
