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RN2108MFV,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Product Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS PNP 50V 0.1A VESM
RFQ Email: [email protected] or Inquires online
Specifications
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Series-
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PackageTape & Reel (TR)
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Part StatusActive
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Transistor TypePNP - Pre-Biased
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Current - Collector (Ic) (Max)100 mA
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Voltage - Collector Emitter Breakdown (Max)50 V
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Resistor - Base (R1)22 kOhms
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Resistor - Emitter Base (R2)47 kOhms
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DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
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Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
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Current - Collector Cutoff (Max)500nA
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Frequency - Transition-
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Power - Max150 mW
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Mounting TypeSurface Mount
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Package / CaseSOT-723
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Supplier Device PackageVESM
