RN2711,LF

RN2711,LF

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

PNP X 2 BRT, Q1BSR=10KΩ, Q1BER=I

RFQ Email: [email protected] or Inquires online

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max)
    100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Resistor - Base (R1)
    10kOhms
  • Resistor - Emitter Base (R2)
    -
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Frequency - Transition
    200MHz
  • Power - Max
    200mW
  • Mounting Type
    Surface Mount
  • Package / Case
    5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package
    USV

RN2711,LF Request a Quote

In Stock 33117
Quantity:
Unit Price (Reference Price):
0.31000
Target price:
Total:0.31000