RN4989(TE85L,F)

RN4989(TE85L,F)

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

NPN + PNP BRT, Q1BSR=47KΩ, Q1BER

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max)
    100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Resistor - Base (R1)
    47kOhms
  • Resistor - Emitter Base (R2)
    22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    250MHz, 200MHz
  • Power - Max
    200mW
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
    US6

RN4989(TE85L,F) Request a Quote

In Stock 29494
Quantity:
Unit Price (Reference Price):
0.35000
Target price:
Total:0.35000