TK100E06N1,S1X

TK100E06N1,S1X

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N CH 60V 100A TO-220

Specifications

  • Series
    U-MOSVIII-H
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    2.3mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    140 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    10500 pF @ 30 V
  • FET Feature
    -
  • Power Dissipation (Max)
    255W (Tc)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-220
  • Package / Case
    TO-220-3

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In Stock 12395
Quantity:
Unit Price (Reference Price):
2.62000
Target price:
Total:2.62000

Datasheet