TK16A60W,S4VX

TK16A60W,S4VX

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 600V 15.8A TO220SIS

Specifications

  • Series
    DTMOSIV
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    15.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    190mOhm @ 7.9A, 10V
  • Vgs(th) (Max) @ Id
    3.7V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs
    38 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1350 pF @ 300 V
  • FET Feature
    Super Junction
  • Power Dissipation (Max)
    40W (Tc)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-220SIS
  • Package / Case
    TO-220-3 Full Pack

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In Stock 10525
Quantity:
Unit Price (Reference Price):
3.11000
Target price:
Total:3.11000

Datasheet