TK3A65DA(STA4,QM)

TK3A65DA(STA4,QM)

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 650V 2.5A TO220SIS

Specifications

  • Series
    π-MOSVII
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    2.51Ohm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id
    4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    11 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    490 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    35W (Tc)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-220SIS
  • Package / Case
    TO-220-3 Full Pack

TK3A65DA(STA4,QM) Request a Quote

In Stock 15657
Quantity:
Unit Price (Reference Price):
1.35520
Target price:
Total:1.35520

Datasheet