TK650A60F,S4X

TK650A60F,S4X

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 600V 11A TO220SIS

Specifications

  • Series
    U-MOSIX
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    650mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1.16mA
  • Gate Charge (Qg) (Max) @ Vgs
    34 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1320 pF @ 300 V
  • FET Feature
    -
  • Power Dissipation (Max)
    45W (Tc)
  • Operating Temperature
    150°C
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-220SIS
  • Package / Case
    TO-220-3 Full Pack

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In Stock 15008
Quantity:
Unit Price (Reference Price):
1.41000
Target price:
Total:1.41000

Datasheet