TK8A65D(STA4,Q,M)

TK8A65D(STA4,Q,M)

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 650V 8A TO220SIS

Specifications

  • Series
    π-MOSVII
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    840mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    25 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1350 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    45W (Tc)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-220SIS
  • Package / Case
    TO-220-3 Full Pack

TK8A65D(STA4,Q,M) Request a Quote

In Stock 12861
Quantity:
Unit Price (Reference Price):
2.51000
Target price:
Total:2.51000

Datasheet