TPN1600ANH,L1Q

TPN1600ANH,L1Q

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N CH 100V 17A 8TSON-ADV

Specifications

  • Series
    U-MOSVIII-H
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    100 V
  • Current - Continuous Drain (Id) @ 25°C
    17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    16mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs
    19 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1600 pF @ 50 V
  • FET Feature
    -
  • Power Dissipation (Max)
    700mW (Ta), 42W (Tc)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    8-TSON Advance (3.3x3.3)
  • Package / Case
    8-PowerVDFN

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In Stock 22014
Quantity:
Unit Price (Reference Price):
0.95000
Target price:
Total:0.95000

Datasheet