SI1032X-T1-GE3

SI1032X-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 20V 200MA SC89-3

Specifications

  • Series
    TrenchFET®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    20 V
  • Current - Continuous Drain (Id) @ 25°C
    200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs
    5Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    0.75 nC @ 4.5 V
  • Vgs (Max)
    ±6V
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • FET Feature
    -
  • Power Dissipation (Max)
    300mW (Ta)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    SC-89-3
  • Package / Case
    SC-89, SOT-490

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In Stock 37897
Quantity:
Unit Price (Reference Price):
0.54000
Target price:
Total:0.54000

Datasheet