SI2308BDS-T1-GE3

SI2308BDS-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 60V 2.3A SOT23-3

Specifications

  • Series
    TrenchFET®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    156mOhm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    6.8 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    190 pF @ 30 V
  • FET Feature
    -
  • Power Dissipation (Max)
    1.09W (Ta), 1.66W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3

SI2308BDS-T1-GE3 Request a Quote

In Stock 35914
Quantity:
Unit Price (Reference Price):
0.57000
Target price:
Total:0.57000

Datasheet